2SC5161
Transistors
Rev.A
1/3
High voltage switching transistor
(400V, 2A)
2SC5161
Features
1) Low V
CE(sat)
.
V
CE(sat)
=0.15V (Typ.)
(I
C
/I
B
=1A/0.2A)
2) High breakdown voltage.
V
CEO
=400V
3) Fast switching.
t
f
1.0
s
(I
C
=0.8A)
Structure
Three-layer, diffused planar type
NPN silicon transistor
External dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
-
0.1
+
0.2
-
0.1
+
0.2
+
0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
1.0
0.2
0.5
0.1
9.5
0.5
5.5
1.5
0.3
2.5
1.5
2.3
0.5
0.1
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw
=
10ms
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
400
V
V
V
A(DC)
W
W(Tc
=
25
C)
C
C
400
7
2
I
CP
A(Pulse)
4
1
10
150
-
55 to
+
150
Symbol
Limits
Unit
2SC5161
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Turn-on time
Storage time
Fall time
Emitter-base breakdown voltage
Base-emitter saturation voltage
Transition frequency
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
400
400
7
-
-
25
-
-
-
-
-
-
-
-
-
-
10
30
-
-
-
10
10
50
1
-
1
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
400V
V
EB
=
5V
V
CE
=
5V, I
C
=
0.1A
I
C
/I
B
=
1A/0.2A
V
CE
=
10V,I
E
=-
0.5A,f
=
5MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
t
ON
-
-
1
I
C
=
0.8A, R
L
=
250
I
B1
=-
I
B2
=
0.08A
V
CC
200V
Refer to measurement circuit diagram
s
t
stg
-
-
2.5
s
t
f
-
-
1
s
Typ.
Max.
Unit
Conditions
V
BE(sat)
-
-
1.5
I
C
/I
B
=
1A/0.2A
V
1 Measured using pulse current
Packaging specifications and h
FE
Package name
Code
Taping
Basic ordering unit
(pieces)
TL
2500
B
h
FE
2SC5161
Type
h
FE
values are classified as follows :
Item
B
h
FE
25 to 50
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
V
CE
=
5V
-
25
C
Ta
=
100
C
25
C
Fig.2 Grounded emitter output
characteristics
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
1
COLLECTOR CURRENT : I
C
(A)
0
Fig.3 DC current gain vs.
collector current (
)
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
1000
500
200
100
50
20
10
5
2
1
5V
V
CE
=
10V
Ta
=
25
C
I
B
=
10mA
20mA
40mA
60mA
80mA
120mA
180mA
Tc
=
25
C
2SC5161
Transistors
Rev.A
3/3
Fig.4 DC current gain vs.
collector current (
)
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
1000
500
200
100
50
20
10
5
2
1
Ta
=
25
C
Ta
=
100
C
25
C
-
25
C
Fig.5 Collector-emitter saturation
voltage vs. collector current
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat )
(V)
COLLECTOR CURRENT : I
C
(A)
10
5
2
1
0.5
0.2
0.1
0.01
0.02
0.05
5
I
C
/I
B
=
10
Ta
=
25
C
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
-
25
C
25
C
100
C
I
C
/I
B
=
5
Ta
=-
25
C
100
C
25
C
Fig.7 Gain bandwidth product vs.
emitter current
-
0.001
-
0.002
-
0.005
-
0.01
-
0.02
-
0.05
-
0.1
-
0.2
-
0.5
-
1
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
1
2
5
10
20
50
100
200
500
1000
Ta
=
25
C
V
CE
=
10V
Fig.8 Collector output capacitance
vs. collector-base voltage
0.5
0.2
0.1
1
2
5
10
20
50 100
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1000
500
200
100
50
20
10
5
2
1
Ta
=
25
C
f
=
1MHz
I
E
=
0A
Fig.9 Switching time vs.
collector current
0.01 0.02 0.05
0.2
0.5
0.1
1
2
5
10
TURN ON TIME : t
on
(
s)
STORAGE TIME : t
stg
(
s)
FALL TIME : t
f
(
s)
COLLECTOR CURRENT : I
C
(A)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
t
f
t
on
t
stg
I
C
=
10I
B1
=-
10I
B2
Pulse
Switching characteristic measurement circuit
Base current
wave form
Collector current
wave form
V
IN
P
W
I
C
90%
10%
t
on
t
stg
t
f
I
C
I
B1
I
B2
T.U.T.
I
B2
I
B1
V
CC
200V
R
L
=
250
P
W
50
s
duty cycle
1%
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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